IXDF504SIATSLASHR datasheet(4/10 Pages) IXYS

4 / 10 page

IXDF504 / IXDI504 / IXDN504

Unless otherwise noted, 4.5V

≤ V

CC ≤ 30V , Tj < 150

All voltage measurements with respect to GND. IXD_504 configured as described in Test Conditions. All specifications are for one channel.

Electrical Characteristics @ temperatures over -55 oC to 125 oC (3)

Notes:

1. Operating the device beyond the parameters listed as “Absolute Maximum Ratings” may cause permanent

damage to the device. Exposure to absolute maximum rated conditions for extended periods may affect device

reliability.

2. The device is not intended to be operated outside of the Operating Ratings.

3. Electrical Characteristics provided are associated with the stated Test Conditions.

4. Typical values are presented in order to communicate how the device is expected to perform, but not necessarily

to highlight any specific performance limits within which the device is guaranteed to function.

* The following notes are meant to define the conditions for the θ

J-A, θJ-C and θJ-S values:

1) The

J-A (typ) is defined as junction to ambient. The θJ-A of the standard single die 8-Lead PDIP and 8-Lead SOIC are dominated by the

resistance of the package, and the IXD_5XX are typical. The values for these packages are natural convection values with vertical boards

and the values would be lower with forced convection. For the 6-Lead DFN package, the

J-A value supposes the DFN package is soldered

on a PCB. The

J-A (typ) is 200 °C/W with no special provisions on the PCB, but because the center pad provides a low thermal resistance

to the die, it is easy to reduce the

J-A by adding connected copper pads or traces on the PCB. These can reduce the θJ-A (typ) to 125 °C/W

easily, and potentially even lower. The

J-A for DFN on PCB without heatsink or thermal management will vary significantly with size,

construction, layout, materials, etc. This typical range tells the user what he is likely to get if he does no thermal management.

J-C (max) is defined as juction to case, where case is the large pad on the back of the DFN package. The θJ-C values are generally not

published for the PDIP and SOIC packages. The

J-C for the DFN packages are important to show the low thermal resistance from junction to

the die attach pad on the back of the DFN, -- and a guardband has been added to be safe.

3) The

J-S (typ) is defined as junction to heatsink, where the DFN package is soldered to a thermal substrate that is mounted on a heatsink.

The value must be typical because there are a variety of thermal substrates. This value was calculated based on easily available IMS in the

U.S. or Europe, and not a premium Japanese IMS. A 4 mil dialectric with a thermal conductivity of 2.2W/mC was assumed. The result was

given as typical, and indicates what a user would expect on a typical IMS substrate, and shows the potential low thermal resistance for the

DFNpackage.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

VIH

High input voltage

4.5V

≤ V

CC ≤ 18V

VIL

Low input voltage

4.5V

≤ V

CC ≤ 18V

0.8

VIN

Input voltage range

-5

VCC + 0.3

IIN

Input current

≤ V

IN ≤ VCC

-10

µA

VOH

High output voltage

VCC - 0.025

VOL

Low output voltage

0.025

ROH

High state output

resistance

VCC = 18V, IOUT = 10mA

Ω

ROL

Low state output

resistance

VCC = 18V, IOUT = 10mA

2.5

Ω

IDC

Continuous output current

Rise time

CLOAD =1000pF VCC =18V

Fall time

CLOAD =1000pF VCC =18V

tONDLY

On-time propagation delay

CLOAD =1000pF VCC =18V

tOFFDLY

Off-time propagation delay

CLOAD =1000pF VCC =18V

VCC

Power supply voltage

4.5

ICC

Power supply current

VCC = 18V, VIN = 0V

VIN = 3.5V

VIN = VCC

150

µA

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