IXTP5N60P datasheet(2/4 Pages) IXYS

2 / 4 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 5N60P

IXTP 5N60P

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

DS= 10 V; ID = 0.5 ID25, pulse test

3.0

5.0

iss

750

oss

GS = 0 V, VDS = 25 V, f = 1 MHz

rss

6.3

d(on)

GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

d(off)

G = 18 Ω (External)

g(on)

14.2

GS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

4.8

thJC

1.25

°C/W

thCS

(TO-220)

0.25

°C/W

Source-Drain Diode

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

Min.

Typ.

Max.

GS = 0 V

Repetitive

F = IS, VGS = 0 V, IF = 5 A, -di/dt = 100 A/μs

1.5

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

500

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

TO-263 (IXTA) Outline

TO-220 (IXTP) Outline

Pins:

1 - Gate

2 - Drain

3 - Source

4 - Drain

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