STP150N3LLH6 datasheet(1/16 Pages) STMICROELECTRONICS

部件名	STP150N3LLH6

功能描述	N-channel 30 V, 0.0024 ohm , 80 A, DPAK, IPAK, TO-220

PDF	16 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 16 page

September 2009

Doc ID 15227 Rev 3

1/16

16

STD150N3LLH6

STP150N3LLH6, STU150N3LLH6

N-channel 30 V, 0.0024

Ω , 80 A, DPAK, IPAK, TO-220

STripFET™ VI DeepGATE™ Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

■ Low gate drive power losses

Application

■ Switching applications

Description

This product utilizes the 6th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure.The resulting Power

MOSFET exhibits the lowest RDS(on) in all

packages.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on) max

ID

STD150N3LLH6

30 V

0.0028

Ω

80 A

STP150N3LLH6

30 V

0.0033

Ω

80 A

STu150N3LLH6

30 V

0.0033

Ω

80 A

DPAK

1

3

2

1

IPAK

TO-220

1

2

3

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STD150N3LLH6

150N3LLH6

DPAK

Tape and reel

STP150N3LLH6

150N3LLH6

TO-220

Tube

STU150N3LLH6

150N3LLH6

IPAK

Tube

www.st.com

类似零件编号 - STP150N3LLH6

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