STM8AF528A datasheet(69/110 Pages) STMICROELECTRONICS

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STM8AF52/62xx, STM8AF51/61xx

Electrical characteristics

Doc ID 14395 Rev 9

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10.3.5

Memory characteristics

Flash program memory/data EEPROM memory

General conditions: TA = -40 °C to 150 °C.

Table 37.

Flash program memory/data EEPROM memory

Symbol

Parameter

Conditions

Min(1)

Guaranteed by characterization, not tested in production.

Typ

Max

Unit

VDD

Operating voltage

(all modes, execution/write/erase)

fCPU is 16 to 24 MHz

with 1 ws

fCPU is 0 to 16 MHz

with 0 ws

3.0

—

5.5

VDD

Operating voltage (code execution)

fCPU is 16 to 24 MHz

with 1 ws

fCPU is 0 to 16 MHz

with 0 ws

2.6

—

5.5

tprog

Standard programming time

(including erase) for byte/word/block

(1 byte/4 bytes/128 bytes)

——

6.6

Fast programming time for 1 block

(128 bytes)

——

3.3

terase

Erase time for 1 block (128 bytes)

—

3.3

Table 38.

Flash program memory

Symbol

Parameter

Condition

Min

Max

Unit

TWE

Temperature for writing and erasing

—

-40

150

°C

NWE

Flash program memory endurance

(erase/write cycles)(1)

The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a

write/erase operation addresses a single byte.

TA = 25 °C

1000

—

cycles

tRET

Data retention time

TA = 25 °C

—

years

TA = 55 °C

—

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