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STM8AF5179 数据表(PDF) 60 Page - STMicroelectronics |
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STM8AF5179 数据表(HTML) 60 Page - STMicroelectronics |
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60 / 110 page ![]() Electrical characteristics STM8AF52/62xx, STM8AF51/61xx 60/110 Doc ID 14395 Rev 9 10.3.1 VCAP external capacitor Stabilization for the main regulator is achieved connecting an external capacitor CEXT to the VCAP pin. CEXT is specified in Table 26. Care should be taken to limit the series inductance to less than 15 nH. Figure 11. External capacitor CEXT 1. Legend: ESR is the equivalent series resistance and ESL is the equivalent inductance. 10.3.2 Supply current characteristics The current consumption is measured as described in Figure 8 on page 56 and Figure 9 on page 57. If not explicitly stated, general conditions of temperature and voltage apply. Table 27. Operating conditions at power-up/power-down Symbol Parameter Conditions Min Typ Max Unit tVDD VDD rise time rate — 2(1) 1. Guaranteed by design, not tested in production. — µs/V VDD fall time rate — 2(1) — tTEMP Reset release delay VDD rising — 3 — ms Reset generation delay VDD falling — 3 — µs VIT+ Power-on reset threshold(2) 2. If VDD is below 3 V, the code execution is guaranteed above the VIT- and VIT+ thresholds. RAM content is kept. The EEPROM programming sequence must not be initiated. — 2.65 2.8 2.95 V VIT- Brown-out reset threshold — 2.58 2.73 2.88 VHYS(BOR) Brown-out reset hysteresis —— 70(1) mV C Rleak ESR ESL |
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