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STM8AF5178 数据表(PDF) 76 Page - STMicroelectronics |
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STM8AF5178 数据表(HTML) 76 Page - STMicroelectronics |
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76 / 110 page ![]() Electrical characteristics STM8AF52/62xx, STM8AF51/61xx 76/110 Doc ID 14395 Rev 9 Figure 36. Typical NRST pull-up resistance RPU vs VDD Figure 37. Typical NRST pull-up current Ipu vs VDD The reset network shown in Figure 38 protects the device against parasitic resets. The user must ensure that the level on the NRST pin can go below VIL(NRST) max (see Table 41: NRST pin characteristics), otherwise the reset is not taken into account internally. For power consumption sensitive applications, the external reset capacitor value can be reduced to limit the charge/discharge current. If NRST signal is used to reset external circuitry, attention must be taken to the charge/discharge time of the external capacitor to fulfill the external devices reset timing conditions. Minimum recommended capacity is 10 nF. 30 35 40 45 50 55 60 2.5 3 3.5 4 4.5 5 5.5 6 V DD [V] -40°C 25°C 85°C 125°C 0 20 40 60 80 100 120 140 01 2 3 4 5 6 V DD [V] -40°C 25°C 85°C 125°C |
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