数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

L6385 数据表(PDF) 5 Page - STMicroelectronics

部件名 L6385
功能描述  HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6385 数据表(HTML) 5 Page - STMicroelectronics

  L6385 Datasheet HTML 1Page - STMicroelectronics L6385 Datasheet HTML 2Page - STMicroelectronics L6385 Datasheet HTML 3Page - STMicroelectronics L6385 Datasheet HTML 4Page - STMicroelectronics L6385 Datasheet HTML 5Page - STMicroelectronics L6385 Datasheet HTML 6Page - STMicroelectronics L6385 Datasheet HTML 7Page - STMicroelectronics L6385 Datasheet HTML 8Page - STMicroelectronics L6385 Datasheet HTML 9Page - STMicroelectronics  
Zoom Inzoom in Zoom Outzoom out
 5 / 9 page
background image
leakage losses.
e.g.: HVG steady state consumption is lower than
200
µA, so if HVG TON is 5ms, CBOOT has to
supply 1
µC to CEXT. This charge on a 1µF ca-
pacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advan-
tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if VOUT is close to
GND (or lower) and in the meanwhile the LVG is
on. The charging time (Tcharge ) of the CBOOT is
the time in which both conditions are fulfilled and
it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop
due to
the DMOS RDSON (typical value: 125
Ohm). At low frequency this drop can be ne-
glected. Anyway
increasing the frequency
it
must be taken in to account.
The following equation is useful to compute the
drop on the bootstrap DMOS:
Vdrop
= IchargeRdson → Vdrop =
Qgate
Tcharge
Rdson
where Qgate is the gate charge of the external
power MOS, Rdson is the on resistance of the
bootstrap DMOS, and Tcharge is the charging time
of the bootstrap capacitor.
For example: using a power MOS with a total
gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the Tcharge is 5
µs. In fact:
Vdrop
=
30nC
5
µs
⋅ 125Ω ~ 0.8V
Vdrop has to be taken into account when the volt-
age drop on CBOOT is calculated: if this drop is
too high, or the circuit topology doesn’t allow a
sufficient charging time, an external diode can be
used.
TO LOAD
D99IN1056
H.V.
HVG
ab
LVG
HVG
LVG
CBOOT
TO LOAD
H.V.
CBOOT
DBOOT
VBOOT
VS
VS
VOUT
VBOOT
VOUT
Figure 4. Bootstrap Driver.
-45
-25
0
25
50
75
100
125
0
50
100
150
200
250
Tj (°C)
Typ.
@ Vcc = 15V
Figure 5. Turn On Time vs. Temperature
-45
-25
0
25
50
75
100
125
0
50
100
150
200
250
Tj (°C)
Typ.
@ Vcc = 15V
Figure 6. Turn Off Time vs. Temperature
L6385
5/9



Html Pages

1 2 3 4 5 6 7 8 9


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com