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RB520CS30L 数据表(PDF) 2 Page - NXP Semiconductors

部件名 RB520CS30L
功能描述  100 mA low VF MEGA Schottky barrier rectifier
PDF  14 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

RB520CS30L 数据表(HTML) 2 Page - NXP Semiconductors

  RB520CS30L Datasheet HTML 1Page - NXP Semiconductors RB520CS30L Datasheet HTML 2Page - NXP Semiconductors RB520CS30L Datasheet HTML 3Page - NXP Semiconductors RB520CS30L Datasheet HTML 4Page - NXP Semiconductors RB520CS30L Datasheet HTML 5Page - NXP Semiconductors RB520CS30L Datasheet HTML 6Page - NXP Semiconductors RB520CS30L Datasheet HTML 7Page - NXP Semiconductors RB520CS30L Datasheet HTML 8Page - NXP Semiconductors RB520CS30L Datasheet HTML 9Page - NXP Semiconductors Next Button
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RB520CS30L
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2011
2 of 14
NXP Semiconductors
RB520CS30L
100 mA low VF MEGA Schottky barrier rectifier
2.
Pinning information
[1]
The marking bar indicates the cathode.
3.
Ordering information
4.
Marking
5.
Limiting values
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
cathode
[1]
2
anode
2
1
Transparent
top view
sym001
12
Table 3.
Ordering information
Type number
Package
Name
Description
Version
RB520CS30L
-
leadless ultra small plastic package; 2 terminals;
body 1.0
× 0.6 × 0.5 mm
SOD882
Table 4.
Marking codes
Type number
Marking code
RB520CS30L
AP
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
30
V
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb ≤ 135 °C
[1] -100
mA
Tsp ≤ 145 °C-
100
mA
IFSM
non-repetitive peak forward
current
half sine wave;
tp ≤ 8.3 ms
[2] -3
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[4][3] -315
mW
[4][1] -565
mW
[4][5] -865
mW



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