IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 36N50P IXTQ 36N50P IXTT 36N50P

IXTV36N50P IXTV 36N50PS

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

23

36

S

C

iss

5500

pF

C

oss

V

510

pF

C

rss

40

pF

t

d(on)

25

ns

t

r

V

27

ns

t

d(off)

R

75

ns

t

f

21

ns

Q

g(on)

85

nC

Q

gs

V

30

nC

Q

gd

31

nC

R

thJC

0.23

° C/W

R

thCS

(TO-247 and TO-3P)

0.21

° C/W

(PLUS220)

0.21

° C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

36

A

I

SM

Repetitive

108

A

V

SD

I

1.5

V

Pulse test, t

≤300 µs, duty cycle d≤ 2 %

t

rr

I

400

ns

V

Fig. 2. Exte nde d Output Characte ris tics

@ 25

0

10

20

30

40

50

60

70

80

0

2

4

6

8

10

12141618

202224

8V

5.5V

5V

6V

6.5V

7V

Fig. 1. Output Characte ris tics

@ 25

0

4

8

12

16

20

24

28

32

36

0

123

456

7

8V

7V

5V

6V

5.5V

Characteristic Curves