2

Symbol

Parameter

Unit

SOT-23

SOT-323

I

f

Forward Current (1 μs Pulse)

Amp

1

1

P

IV

Peak Inverse Voltage

V

Same as V

BR

Same as V

BR

T

j

Junction Temperature

°C

150

150

T

stg

Storage Temperature

°C

-65 to 150

-65 to 150

T

jc

°C/W

500

150

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to the device.

2. T

C

= +25°C, where T

C

is defined to be the temperature at the package pins where contact is made to the circuit board.

Electrical Specifications T

Conventional Diodes

Part

Number

HSMP-

Package

Marking

Code

Lead

Code

Configuration

Minimum

Breakdown

Voltage V

BR

(V)

Maximum

Total

Capacitance

C

Minimum

Resistance

at

I

RH (Ω)

Maximum

Resistance

at

I

R

Maximum

Resistance

at

I

RT (Ω)

Resistance

at

I

R

3810

E0

0

Single

100

0.35

1500

10

3.0

48 to 70

3812

E2

2

Series

3813

E3

3

Common Anode

3814

E4

4

Common Cathode

3815

E5

5

Reverse Series

381B

E0

B

Single

381C

E2

C

Series

381E

E3

E

Common Anode

381F

E4

F

Common Cathode

Test Conditions

V

R

= V

BR

Measure

I

R

≤ 10uA

V

R

= 50V

f = 1MHz

I

F

= 0.01mA

f = 100MHz

I

F

= 20mA

f = 100MHz

I

F

= 100mA

f = 100MHz

I

F

= 1mA

f = 100MHz

High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes

Part

Number

HSMP-

Package

Marking

Code

Lead

Code

Configuration

Minimum

Breakdown

Voltage

V

Maximum

Series

Resistance

R

Series

Resistance

I

R

Typical

Total

Capacitance

C

Maximum

Total

Capacitance

C

Typical

Total

Inductance

L

4810

EB

B

Dual Cathode

100

3

48 - 70

0.35

0.4

1

481B

EB

B

Dual Cathode

Test Conditions

V

R

= V

BR

Measure

I

R

≤ 10μA

I

F

= 100mA

f =

100MHz

I

F

= 1mA

f = 100MHz

V

R

= 50V

f = 1MHz

V

R

= 50V

f = 1MHz

f =

500MHz

- 3GHz