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MBRF2040CT 数据表(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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MBRF2040CT 数据表(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 2 page ![]() A,Nov,2010 TO-220F Plastic-Encapsulate Diodes MBR F2030, 35, 40, 45, 50CT SCHOTTKY BARRIER RECTIFIER FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Value Unit Symbol Parameter MBR F20 30CT MBR F20 35CT MBR F20 40CT MBR F20 45CT MBR F20 50CT VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage 30 35 40 45 50 V VR(RMS) RMS reverse voltage 21 24.5 28 31.5 35 V IO Average rectified output current 20 A IFSM Non-Repetitive peak forward surge current 8.3ms half sine wave 150 A PD Power dissipation 2 W RΘJA Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ TO-220F 1. ANODE 2. CATHODE 3. ANODE TIGER ELECTRONIC CO.,LTD |
类似零件编号 - MBRF2040CT |
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类似说明 - MBRF2040CT |
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