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MBRF3060CT 数据表(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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MBRF3060CT 数据表(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 1 page ![]() B,Apr,2013 TO-220F Plastic-Encapsulate Diodes MBR F3060CT SCHOTTKY BARRIER RECTIFIER FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications MAXIMUM RATINGS ( Ta=25 ℃ unless otherwise noted ) Symbol Parameter Value Unit VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage 60 V VR(RMS) RMS reverse voltage 42 V IO Average rectified output current 30 A IFSM Non-Repetitive peak forward surge current 8.3ms half sine wave 200 A PD Power dissipation 2 W RΘJA Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) IR=1mA 60 V Reverse current IR VR=60V 0.2 mA VF1 IF=15A 0.8 V Forward voltage VF2* IF=30A 0.95 V Typical total capacitance Ctot* VR=4V,f=1MHz 400 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. TO-220F 1. ANODE 2. CATHODE 3. ANODE TIGER ELECTRONIC CO.,LTD |
类似零件编号 - MBRF3060CT |
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类似说明 - MBRF3060CT |
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