STTH12T06 datasheet(3/9 Pages) STMICROELECTRONICS

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STTH12T06

Characteristics

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A, VR = 30 V,

dIF/dt = -50 A/µs

IF = 12 A, VR = 400 V,

dIF/dt = -200 A/µs

Tj = 125 °C

IF = 12 A, VR = 400 V,

dIF/dt = -200 A/µs

IRM

Reverse recovery current

Tj = 25 °C

IF = 12 A, VR = 400 V,

dIF/dt = -200 A/µs

0.83

1.1

Tj = 125 °C

2.3

Softness factor

Tj = 25 °C

1.4

Tj = 125 °C

0.7

QRR

Reverse recovery charge

Tj = 25 °C

6.5

Tj = 125 °C

Figure 1. Average forward power dissipation

versus average forward current

Figure 2. Forward voltage drop versus forward

current (typical values)

2468

PF(AV)(W)

=0.05

=0.1

=0.2

=0.5

=tp/T

IF(AV)(A)

FM(A)

0.1

1.0

10.0

100.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

j=150 °C

j=125 °C

j=25 °C

VFM(V)

Figure 3. Relative variation of thermal

impedance, junction to case, versus pulse

duration

Figure 4. Peak reverse recovery current versus

dIF/dt (typical values)

t h (j-c)/Rt h (j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

Single pulse

t( )

p s

RM(A)

100

200

300

400

500

600

700

800

900

1000

R=400 V

j=125 °C

F=0.5 x IF(AV)

F=IF(AV)

F=2 x IF(AV)

dIF/dt(A/µs)

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