2004 Jan 26

2

NXP Semiconductors

Product data sheet

Low-leakage diode

BAS416

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 µs

• Continuous reverse voltage: max. 75 V

• Repetitive peak reverse voltage: max. 85 V

• Repetitive peak forward current: max. 500 mA.

APPLICATIONS

• Low-leakage current applications in surface mounted

circuits.

DESCRIPTION

Epitaxial, medium-speed switching diode with a low

leakage current encapsulated in a small SOD323 SMD

plastic package.

PINNING

PIN

DESCRIPTION

1

cathode

2

anode

Fig.1

Simplified outline (SOD323) (SC-76) and

symbol.

Marking code: D4.

The marking bar indicates the cathode.

handbook, halfpage

12

MAM406

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on an FR4 printed-circuit board.

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BAS416

−

plastic surface mounted package; 2 leads

SOD323

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

85

V

continuous reverse voltage

−

75

V

continuous forward current

see Fig.2

−

200

mA

repetitive peak forward current

−

500

mA

non-repetitive peak forward current

surge; see Fig.4

t = 1

µs

−

4

A

t = 1 ms

−

1

A

t = 1 s

−

0.5

A

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C