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MIC4604 数据表(PDF) 3 Page - Micrel Semiconductor |
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MIC4604 数据表(HTML) 3 Page - Micrel Semiconductor |
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3 / 18 page  Micrel, Inc. MIC4604 June 25, 2013 3 Revision 1.0 Absolute Maximum Ratings (1, 4) Supply Voltage (VDD, VHB – VHS) ..................... −0.3V to 18V Input Voltages (VLI, VHI, VEN)................. −0.3V to VDD + 0.3V Voltage on LO (VLO) ............................. −0.3V to VDD + 0.3V Voltage on HO (VHO) .....................VHS − 0.3V to VHB + 0.3V Voltage on HS (continuous) ............................... −1V to 90V Voltage on HB ..............................................................108V Average Current in VDD to HB Diode .......................100mA Storage Temperature (Ts) ......................... −60°C to +150°C ESD Rating (3) HBM ...................................................................... 1.5kV MM .........................................................................200V Operating Ratings (2) Supply Voltage (VDD) [decreasing VDD] ........... 5.25V to 16V Supply Voltage (VDD) [increasing VDD] .............. 5.5V to 16V Voltage on HS .................................................... −1V to 85V Voltage on HS (repetitive transient) ................... −5V to 90V HS Slew Rate ............................................................ 50V/ns Voltage on HB ................................VHS + 4.5V to VHS + 16V and/or..........................................VDD − 1V to VDD + 85V Junction Temperature (TJ) ........................ –40°C to +125°C Junction Thermal Resistance 2.5mm x 2.5mm TDFN-10L ( θ JA) ....................... 75°C/W SOIC-8L ( θ JA) .................................................. 98.9°C/W Electrical Characteristics (4) VDD = VHB = 12V; VSS = VHS = 0V; No load on LO or HO; TA = +25°C; unless otherwise noted. Bold values indicate – 40°C ≤ TJ ≤ +125°C Symbol Parameter Condition Min. Typ. Max. Units Supply Current IDD VDD Quiescent Current LI = HI = 0V 48 200 µA IDDO VDD Operating Current f = 20kHz 136 300 µA IHB Total HB Quiescent Current LI = HI = 0V or LI = 0V and HI = 5V 20 75 µA IHBO Total HB Operating Current f = 20kHz 29 200 µA IHBS HB to VSS Quiescent Current VHS = VHB = 90V 0.5 5 µA Input (LI, HI) VIL Low-Level Input Voltage 0.8 V VIH High-Level Input Voltage 2.2 V VHYS Input Voltage Hysteresis 0.05 V RI Input Pull-Down Resistance 100 240 500 k Ω Undervoltage Protection VDDF VDD Falling Threshold 4.0 4.4 4.9 V VDDH VDD Threshold Hysteresis Rising VDD Threshold; VDDR = VDDF + VDDH 0.21 V VHBF HB Falling Threshold 4.0 4.4 4.9 V VHBH HB Threshold Hysteresis Rising VHB Threshold; VHBR = VHBF + VHBH 0.23 V Bootstrap Diode VDL Low-Current Forward Voltage IVDD-HB = 100µA 0.42 0.70 V VDH High-Current Forward Voltage IVDD-HB = 50mA 0.75 1.0 V RD Dynamic Resistance IVDD-HB = 50mA 2.8 5.0 Ω Notes: 1. Exceeding the absolute maximum ratings may damage the device. 2. The device is not guaranteed to function outside its operating ratings. 3. Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5k Ω in series with 100pF. 4. Specification s are for packaged product only. |
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