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ISC3247AS1 数据表(PDF) 1 Page - Isahaya Electronics Corporation |
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ISC3247AS1 数据表(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 4 page ![]() 〈SMALL-SIGNAL TRANSISTOR〉 ISC3247AS1 FOR RELAY DRIVE, POWOR SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION DESCRIPTION ISC3247AS1 is a silicon NPN epitaxial type transistor. Designed with high voltage, high collector current, dissipation and high hFE. FEATURE ●High hFE. hFE=600 to 1800 ●High voltage. V CEo=50V ●Low collector to emitter saturation voltage. V CE(sat)=0.15V (@IC=500mA, IB=10mA) ●High collector dissipation. P C=600mW APPLICATION Relay drive or power supply for audio machine, VCR, and other electronic machine. . ※) It shows hFE classification in right table. OUTLINE DRAWING Unit:mm MAXIMUM RATINGS(Ta=25℃) Symbol Parameter Ratings Unit VCBO Collector to Base voltage 50 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 50 V I C Collector current 1 A I CM Peak collector current 2 A P c Collector dissipation 600 mW T j Junction temperature +150 ℃ T stg Storage temperature -55~+150 ℃ Item H J hFE item 600~1200 900~1800 ELECTRICAL CHARACTERISTICS(Ta=25℃) Parameter Parameter Test conditions Limits Unit Min Typ Max V(BR)CBO C to B break down voltage I C= 10μA , IE =0mA 50 - - V V(BR)EBO E to B break down voltage I E= 10μA , IC =0mA 6 - - V V(BR)CEO C to E break down voltage I C= 1mA , RBE= ∞ 50 - - V ICBO Collector cut off current V CB= 40V , IE= 0mA - - 0.1 μA IEBO Emitter cut off current V EB=2V , IC= 0mA - - 0.1 μA hFE※ DC forward current gain V CE = 6V , IC= 0.1A 600 - 1800 - VCE(sat) C to E Saturation Voltage I C=500mA , IB= 10mA - 0.15 0.5 V fT Gain band width product V CE= 10V , IE= -10mA - 130 - MHz Cob Collector output capacitance V CB= 10V , IE= 0mA,f=1MHz - 12 - pF JEITA: JEDEC: TERMINAL CONNECTER ①:EMITTER ②:COLLECTOR ③:BASE 4.0 2.5 2.5 0.45 0.1 ① ② ③ |
类似零件编号 - ISC3247AS1 |
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类似说明 - ISC3247AS1 |
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