ISC4356AS1 datasheet(1/4 Pages) ISAHAYA

部件名	ISC4356AS1

功能描述	FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

PDF	4 Pages

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制造商	ISAHAYA [Isahaya Electronics Corporation]

网页	http://www.idc-com.co.jp

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〈SMALL-SIGNAL TRANSISTOR〉

ISC4356AS1

FOR HIGH CURRENT DRIVE APPLICATION

SILICON NPN EPITAXIAL TYPE

ISAHAYA ELECTRONICS CORPORATION

DESCRIPTION

ISC4356AS1 is a silicon NPN epitaxial type transistor

designed relay drive application.

FEATURE

●High voltage.

V

CEo=60V

●High collector current. I

C=2A

●Low V

CE(sat)

V

CE(sat)=0.5V max (@IC=1A, IB=50mA)

●High collector dissipation. P

C=600mW

APPLICATION

Audio machine, VCR, relay drive.

.

※） It shows hFE classification in right table.

OUTLINE DRAWING

Unit：ｍｍ

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

Ratings

Unit

VCBO

Collector to Base voltage

60

V

VEBO

Emitter to Base voltage

6

V

VCEO

Collector to Emitter voltage

60

V

I

C

Collector current

2

A

I

CM

Peak collector current

3

A

P

c

Collector dissipation

600

mW

T

j

Junction temperature

+150

℃

T

stg

Storage temperature

-55～+150

℃

Item

C

D

E

hFE item

55～110

90～180

150～300

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Parameter

Test conditions

Limits

Unit

Min

Typ

Max

V(BR)CBO

C to B break down voltage

I

C= 10μA , IE =0mA

60

-

V

V(BR)EBO

E to B break down voltage

I

E= 10μA , IC =0mA

6

-

V

V(BR)CEO

C to E break down voltage

I

C= 2mA , RBE= ∞

60

-

V

ICBO

Collector cut off current

V

CB= 50V , IE= 0mA

-

0.2

μA

IEBO

Emitter cut off current

V

EB

= 4V , I

C= 0mA

-

0.2

μA

hFE※

DC forward current gain

V

CE = 4V , IC= 100mA

55

-

300

-

VCE(sat)

C to E Saturation Voltage

I

C=1A , IB= 50mA

-

0.2

0.5

V

fT

Gain band width product

V

CE= 10V , IE= -10mA

-

80

-

MHz

Cob

Collector output capacitance

V

CB= 10V , IE= 0mA,f=1MHz

-

18

-

pF

JEITA：

JEDEC：

TERMINAL CONNECTER

①：EMITTER

②：COLLECTOR

③：BASE

4.0

2.5

0.45

0.1

①

②

③

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