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STW2040 数据表(PDF) 3 Page - STMicroelectronics

部件名 STW2040
功能描述  High voltage fast-switching NPN power transistor
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW2040 数据表(HTML) 3 Page - STMicroelectronics

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STW2040
Electrical characteristics
Doc ID 15149 Rev 2
3/10
2
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 700 V
250
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 9 V
1
mA
V(BR)CEO
Collector-emitter
breakdown voltage (IB = 0)
IC = 10 mA
500
V
VCE(sat)
(1)
1. Pulsed duration = 300 µs, duty cycle
≤ 1.5 %
Collector-emitter saturation
voltage
IC = 6 A __
IB = 1.2 A
IC = 12 A _
IB = 2.4 A
IC = 20 A _
IB = 4 A
0.2
0.3
0.6
0.5
V
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 6 A __
IB = 1.2 A
IC = 12 A _
IB = 2.4 A
1.2
1.5
V
V
hFE
(1)
DC current gain
IC = 10 mA
VCE = 5 V
IC = 6 A ___ VCE = 5 V
IC = 12 A
VCE = 5 V
8
15
10
21
27
ton
tf
ts
Resistive load
Turn-on time
Fall time
Storage time
VCC = 200 V
VBE(off) = -5 V IC = 7.5 A
IB(on) = 1.5 A
IB(off) = -3 A
140
100
1.6
ns
ns
µs
ts
tf
Inductive load
Storage time
Fall time
VCL = 250 V
VBE(off) = -5 V IC = 7.5 A
IB(on) = 1.5 A
IB(off) = -3 A
1.8
30
µs
ns



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