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PMPB48EP 数据表(PDF) 2 Page - NXP Semiconductors |
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PMPB48EP 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 14 page ![]() NXP Semiconductors PMPB48EP 30 V, single P-channel Trench MOSFET PMPB48EP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 10 September 2012 2 / 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source 6 5 7 8 4 Transparent top view 1 2 3 DFN2020MD-6 (SOT1220) S D G 017aaa257 3. Ordering information Table 3. Ordering information Package Type number Name Description Version PMPB48EP DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1220 4. Marking Table 4. Marking codes Type number Marking code PMPB48EP 1U 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - -30 V VGS gate-source voltage Tj = 25 °C -20 20 V VGS = -10 V; Tamb = 25 °C; t ≤ 5 s [1] - -6.8 A VGS = -10 V; Tamb = 25 °C [1] - -4.7 A ID drain current VGS = -10 V; Tamb = 100 °C [1] - -3 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -19 A Ptot total power dissipation Tamb = 25 °C [1] - 1.7 W |
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