SI3443DVPBF datasheet(1/7 Pages) IRF

部件名	SI3443DVPBF

功能描述	Ultra Low On-Resistance

PDF	7 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

1 / 7 page

Parameter

Max.

Units

VDS

Drain- Source Voltage

-20

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ -4.5V

-4.4

ID @ TA= 70°C

Continuous Drain Current, VGS @ -4.5V

-3.5

A

IDM

Pulsed Drain Current

-20

PD @TA = 25°C

Power Dissipation

2.0

PD @TA = 70°C

Power Dissipation

1.3

Linear Derating Factor

0.016

W/°C

EAS

Single Pulse Avalanche Energy

31

mJ

VGS

Gate-to-Source Voltage

± 12

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

08/31/05

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

62.5

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

Si3443DVPbF

HEXFET® Power MOSFET

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This benefit

provides the designer with an extremely efficient device for

use in battery and load management applications.

The

TSOP-6

package with its customized leadframe

produces a HEXFET® power MOSFET with RDS(on) 60%

less than a similar size SOT-23. This package is ideal for

applications where printed circuit board space is at a

premium. It's unique thermal design and RDS(on) reduction

enables a current-handling increase of nearly 300%

compared to the SOT-23.

VDSS = -20V

RDS(on) = 0.065Ω

Description

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l -2.5V Rated

l Lead-Free

Top View

1

2

D

G

A

D

S

3

4

5

6

TSOP-6

PD-95240

类似零件编号 - SI3443DVPBF

制造商	部件名	数据表	功能描述
InterFET Corporation	SI3443DVPBF	109Kb / 7P	HEXFET Power MOSFET

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