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STPS8L30B 数据表(PDF) 3 Page - STMicroelectronics

部件名 STPS8L30B
功能描述  Low drop power Schottky rectifier
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS8L30B 数据表(HTML) 3 Page - STMicroelectronics

  STPS8L30B Datasheet HTML 1Page - STMicroelectronics STPS8L30B Datasheet HTML 2Page - STMicroelectronics STPS8L30B Datasheet HTML 3Page - STMicroelectronics STPS8L30B Datasheet HTML 4Page - STMicroelectronics STPS8L30B Datasheet HTML 5Page - STMicroelectronics STPS8L30B Datasheet HTML 6Page - STMicroelectronics STPS8L30B Datasheet HTML 7Page - STMicroelectronics  
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STPS8L30
Characteristics
3/7
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(t )
P
(1µs)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Figure 5.
Non repetitive surge peak
forward current versus overload
duration (maximum values)
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
IM
t
δ=0.5
I (A)
M
t(s)
T =25°C
c
T =75°C
c
T =125°C
c
Z/R
th(j-c)
th(j-c)
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Figure 7.
Reverse leakage current versus
reverse voltage applied (typical
values)
Figure 8.
Junction capacitance versus
reverse voltage applied (typical
values)
0
5
10
15
20
25
30
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
3E+2
I (mA)
R
V (V)
R
T =125°C
j
T =150°C
j
T =25°C
j
110
40
100
200
500
1000
2000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25°C
OSC
RMS
j



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