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STP80NF06 数据表(PDF) 4 Page - STMicroelectronics

部件名 STP80NF06
功能描述  N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP80NF06 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP80NF06 - STB80NF06 - STW80NF06
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown voltage
ID = 250 µA, VGS = 0
60
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating
1
µA
VDS=Max rating,
TC=125°C
10
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 40A
0.0065
0.008
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
VDS = 2.5V, ID=18A
20
S
Ciss
Input capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
3850
pF
Coss
Output capacitance
800
pF
Crss
Reverse transfer
capacitance
250
pF
Qg
Total gate charge
VDD = 80V, ID = 80A,
VGS = 10V
115
150
nC
Qgs
Gate-source charge
24
nC
Qgd
Gate-drain charge
46
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 27V, ID = 40A
RG =4.7Ω VGS = 10V
(see Figure 13)
25
85
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
VDD = 27V, ID = 40A,
RG =4.7Ω, VGS = 10V
(see Figure 13)
70
25
ns
ns
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =44V, ID =80A
RG =4.7Ω, VGS = 10V
(see Figure 15)
85
75
110
ns
ns
ns



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