STP9NK65Z datasheet(3/15 Pages) STMICROELECTRONICS

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STP9NK65Z - STP9NK65ZFP

Electrical ratings

3/15

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

VDS

Drain-source voltage (VGS = 0)

650

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

6.4

6.4 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

4(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

25.6

25.6 (1)

PTOT

Total dissipation at TC = 25 °C

125

Derating factor

0.24

W/°C

VESD(G-S)

Gate source ESD(HBM-C=100 pF, R=1.5 k

Ω)

4000

dv/dt (3)

ISD ≤ 6.4 A, di/dt ≤ 200 A/µs, VDD ≤ 80%V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (DC)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

Rthj-case

Thermal resistance junction-case max

4.2

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

6.4

EAS

Single pulse avalanche energy

(starting Tj=25 °C, ID=IAR, VDD=50 V)

200

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