08.08.2011

QL65J7SA

1 of 3

QL65J7SA

TECHNICAL DATA

Visible Laser Diode

InGaAIP

Features

• Lasing Mode Structure: single mode

• Peak Wavelength : typ. 660 nm

• Optical Ouput Power: 50 mW

• Package: 5.6 mm

Electrical Connection

Pin Configuration

Bottom View

n-type

PIN

Function

1

LD Cathode

2

LD Anode, PD Cathode

3

PD Anode

Item

Symbol

Value

Unit

CW Output Power

60

mW

Laser Diode Reverse Voltage

2

V

Photo Diode Reverse Voltage

30

V

Operating Case Temperature

-10 … +75

°C

Storage Temperature

-40 … +85

°C

Item

Symbol

Min.

Typ.

Max.

Unit

Optical Specifications

CW Output Power

-

50

-

mW

Center Wavelength

λ

C

653

660

667

nm

6

9

12

deg

Beam Divergence

15

20

25

deg

Beam Angle

-

-

±3

deg

-

-

±3

deg

Optical Distance

ΔX, ΔY, ΔZ

-

-

±60

µm

Electrical Specifications

Threshold Current

30

45

60

mA

Operating Current

-

90

120

mA

Slope Efficiency

η

-

1.0

-

W/A

Operating Voltage

-

2.6

3.0

V

Monitor Current

0.01

0.3

1.0

mA

The above specifications are for reference purpose only and subjected to change without prior notice.