QL85I6SA datasheet(1/3 Pages) ROITHNER

部件名	QL85I6SA

功能描述	Infrared Laser Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	ROITHNER [Roithner LaserTechnik GmbH]

网页	http://www.roithner-laser.com

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1 / 3 page

10.12.2010

QL85I6SA

1 of 1

QL85I6SA

TECHNICAL DATA

Infrared Laser Diode

Features

• AlGaAs laser diode

• Peak Wavelength: 850 nm

• Optical Ouput Power: 5 mW

• Package: 5.6 mm, with Photo Diode

Electrical Connection

Pin Configuration

Bottom View

m-type

Function

1

LD Cathode

2

LD Anode, PD Cathode

3

PD Anode

Absolute Maximum Ratings (TC=25°C)

Item

Symbol

Value

Unit

CW Output Power

PO

32

mW

LD Reverse Voltage

VR (LD)

2

V

PD Reverse Voltage

VR (PD)

30

V

Operating Case Temperature

TC

-10 … +60

°C

Storage Temperature

Tstg

-40 … +85

°C

Specifications (TC=25°C)

Item

Symbol

Min.

Typ.

Max.

Unit

Optical Specifications

CW Output Power

PO

-

30

-

mW

Peak Wavelength *

λP

845

850

860

nm

θ║

7.0

9.0

12.0

deg

FWHM Beam Divergence

θ┴

25

29

36

deg

Δθ║

-2.0

-

2.0

deg

Emission Point Accuracy

Angle

Δθ┴

-3.0

-

3.0

deg

Astigmatism

As

15

µm

Electrical Specifications

Threshold Current

Ith

5

20

35

mA

Operating Current

Iop

50

70

90

mA

Slope Efficiency

η

0.4

0.7

1.0

W/A

Operating Voltage

Uop

-

2.0

2.5

V

Monitor Current

Im

0.05

0.2

0.5

mA

* Measuring specifications.

The above specifications are for reference purpose only and subjected to change without prior notice.

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