QL90F7S-A/B/C

InGaAs Laser Diode

QL90F7S-A/B/C is a MOCVD grown 905nm band InGaAs laser diode with quantum well

structure. It’s an attractive light source, with a typical light output power of 10mW for Laser,

industrial optical module and sensor application

- Sensor

- Visible Light Output

:

λp = 905 nm

- Optical Power Output :

10mW CW

- Package Type

:

TO-18 (5.6mm

φ)

- Built-in Photo Diode for Monitoring Laser Diode

A

LD cathode, PD anode (Fig. 1)

B

LD , PD anode (Fig. 2)

C

LD anode, PD cathode (Fig. 3)

Bottom View

Pin Configuration

Jun.2004. Ver. 0

Fig. 1

QL90F7SA

Fig. 2

QL90F7SB

Fig. 3

QL90F7SC