2

Electrical Specifications

1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6442 published specifications.

3. This final package part performance is verified by a functional test correlated to actual performance at one or more

frequencies.

4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may

be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)

matching.

5. The Gain and P1dB tested at 37GHz and 40GHz guaranteed with measurement accuracy +/-1.5dB for gain and +/-

1.6dB for P1dB.

Table 1. RF Electrical Characteristics

TA=25°C, Vdd=5.0V, Idq=0.7V, Vg=-1V, Zo=50 Ω

Parameter

Min

Typ.

Max

Unit

Operational Frequency, Freq

37

40

GHz

Small-signal Gain, Gain

20

23

dB

Output Power at 1dB Gain Compression, P-1dB

28

30

dBm

Relative Third Order Inter-modulation level (∆f=10MHz, Po=+12dBm, SCL), IM3

36

dBc

Input Return Loss, RLin

8

dB

Output Return Loss, RLout

8

dB

Reverse Isolation, Isolation

45

dB

Table 2. Recommended Operating Range

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal

Resistance at backside temperature (Tb) = 25°C calculated from measured data.

Description

Min.

Typical

Max.

Unit

Comments

Drain Supply Current, Idq

700

mA

Vdd = 5V, Vg set for Idq Typical

Gate Supply Operating Voltage, Vg

-1.3

-1

-0.7

V

Idq=700mA