AVT-50663 datasheet(2/13 Pages) AVAGO

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Absolute Maximum Rating[1] TA=25°C

Symbol

Parameter

Units

Absolute Max.

Device Current

PIN,MAX

CW RF Input Power

dBm

PDISS

Total Power Dissipation [3]

297

TOPT

Operating Temperature

°C

-40 to 85

TJ,MAX

Junction Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to 150

Thermal Resistance

Thermal Resistance [2]

θJC = 149°C/W

(Id = 36 mA, TC = 85°C)

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using Infrared

measurement technique.

3. Ground lead temperature is 25°C. Derate

6.7mW/°C for TC >106°C.

Electrical Speciﬁcations [4]

TA = 25°C, Zo = 50

Ω, VCC = 5 V, Rbias = 30 Ω, Pin = -15 dBm (unless speciﬁed otherwise)

Symbol

Parameter and Test Condition

Frequency

Units

Min.

Typ.

Max.

Device Current

32.5

39.5

Power Gain

900 MHz

2000 MHz

13.8

15.8

15.3

16.8

ΔGp

Gain Flatness

0.05 - 2 GHz

0.6

f3dB

3 dB Bandwidth

GHz

5.2

OIP3 [5]

Output 3rd Intercept Point

900 MHz

2000 MHz

dBm

23.5

26.4

S11

Input Return Loss, 50

Ω source

900 MHz

2000 MHz

-21.9

-15.4

S22

Output Return Loss, 50

Ω load

900MHz

2000 MHz

-19.1

-14.4

S12

Reverse Isolation

900 MHz

2000 MHz

-19.2

P1dB

Output Power at 1dB Gain Compression

900 MHz

2000 MHz

dBm

12.5

Noise Figure

900 MHz

2000 MHz

3.7

Notes:

4. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).

5. OIP3 test condition: FRF1 - FRF2 = 10MHz with input power of -15 dBm per tone measured at worse side band.

Figure 1. Block diagram of board used for Id, Gain, OIP3, S11, S22, S12, OP1dB and NF measurements.

Circuit losses have been de-embedded from actual measurements.

Pin 1, 2, 4, 5

(GND)

Pin 6

Pin 3

RFin

RFout

VCC

Zo = 50 Ohm

Bias Tee

Rbias

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