2SD1306NETL-H datasheet(2/7 Pages) RENESAS

2 / 7 page

2SD1306

Preliminary

R07DS0280EJ0300 Rev.3.00

Page 2 of 5

Mar 28, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

—

IC = 10

μA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

—

IC = 1 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

—

IE = 10

μA, IC = 0

Collector cutoff current

ICBO

—

1.0

μA

VCB = 20 V, IE = 0

DC current transfer ratio

hFE*

250

—

800

VCE = 1 V, IC = 150 mA*

Base to emitter voltage

VBE

—

1.0

VCE = 1 V, IC = 150 mA*

Collector to emitter saturation voltage

VCE(sat)

—

0.5

IC = 500 mA, IB = 50 mA*

Gain bandwidth product

—

250

—

MHz

VCE = 1 V, IC = 150 mA*

Notes: 1. The 2SD1306 is grouped by hFE as follows.

2. Pulse test

Grade

Mark

hFE

250 to 500

400 to 800

2SD1306NETL-H 数据表(PDF) 2 Page - Renesas Technology Corp

2SD1306NETL-H 数据表(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7

数据表下载

链接网址

2SD1306NETL-H 数据表(PDF) 2 Page - Renesas Technology Corp

2SD1306NETL-H 数据表(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7

数据表 下载

链接网址

数据表下载