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AME8801SEEYZ 数据表(PDF) 11 Page - Analog Microelectronics |
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AME8801SEEYZ 数据表(HTML) 11 Page - Analog Microelectronics |
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11 / 24 page ![]() AME 11 AME8801 / 8812 / 8840 300mA CMOS LDO Rev.S.02 n Absolute Maximum Ratings n Recommended Operating Conditions n Thermal Information Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device. * HBM B:2000V~3999V * Measure θ JC on center of molding compound if IC has no tab. ** MIL-STD-202G 210F Parameter Package Die Attach Symbol Maximum Unit SOT-25 TSOT-25 Conductive Epoxy 81 SOT-26 TSOT-26 Non-Conductive Epoxy 140 SOT-25 TSOT-25 Conductive Epoxy 260 SOT-26 TSOT-26 Non-Conductive Epoxy 280 SOT-25 TSOT-25 Conductive Epoxy 400 SOT-26 TSOT-26 Non-Conductive Epoxy 400 150 oC 350 oC mW θJA PD oC / W Solder Iron (10Sec)** Maximum Junction Temperature Thermal Resistance * (Junction to Case) Thermal Resistance (Junction to Ambient) Internal Power Dissipation θJC Parameter Symbol Rating Unit Ambient Temperature Range TA - 40 to +85 oC Junction Temperature Range TJ - 40 to +125 oC Storage Temperature Range TSTG - 65 to +150 oC Parameter Maximum Unit Input Voltage -0.3 to +8 V EN, BYP Voltage -0.3 to +8 V Output Voltage -0.3 to VIN + 0.3 V Output Current PD / (VIN - VOUT) mA ESD Classification B* |
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