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STF18N55M5 数据表(PDF) 8 Page - STMicroelectronics |
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STF18N55M5 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 22 page ![]() Electrical characteristics STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 8/22 Doc ID 17078 Rev 2 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Switching losses vs gate resistance (1) Figure 17. Normalized BVDSS vs temperature 1. Eon including reverse recovery of a SiC diode VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID=250µA AM08670v1 RDS(on) 1.3 0.7 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 ID=6.5A VGS=10V 1.1 0.9 2.1 1.5 1.9 1.7 AM08671v1 E 60 40 20 0 0 20 RG( Ω) ( μJ) 10 30 80 100 120 40 ID=9A VCL=400V Eon Eoff VGS=10V 140 AM08673v1 BVDSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 ID=1mA AM08672v1 |
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