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TLP285-4 数据表(PDF) 15 Page - Toshiba Semiconductor |
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TLP285-4 数据表(HTML) 15 Page - Toshiba Semiconductor |
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15 / 16 page ![]() TLP285-4 2009-05-27 15 Figure 1 Partial discharge measurement procedure according to EN60747 Destructive test for qualification and sampling tests. Method A (for type and sampling tests, destructive tests) t1, t2 t3, t4 tp(Measuring time for partial discharge) tb tini V VINITIAL(6kV) Vpr(1060V) VIORM(707V) 0 t1 tini t3 t2 tP tb t4 t = 1 to 10 s = 1 s = 10 s = 12 s = 60 s tP Vpr(1325V ) VIORM(707V ) V t t3 t4 tb Figure 2 Partial discharge measurement procedure according to EN60747 Non-destructive test for100% inspection. Method B (for sample test,non- destructive test) t3, t4 tp(Measuring time for partial discharge) tb = 0.1 s = 1 s = 1.2 s Figure 3 Dependency of maximum safety ratings on ambient temperature 500 400 300 200 100 0 0 25 50 75 100 125 150 175 500 400 300 200 100 0 Ta (°C) → Psi Isi ← Isi (mA) Psi (mW) |
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