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ADR540BKS-R2 数据表(PDF) 4 Page - Analog Devices

部件名 ADR540BKS-R2
功能描述  High Precision Shunt Mode Voltage References
PDF  16 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADR540BKS-R2 数据表(HTML) 4 Page - Analog Devices

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ADR520/ADR525/ADR530/ADR540/ADR550
Rev. E | Page 4 of
16
ADR530 ELECTRICAL CHARACTERISTICS
IIN = 50 μA to 15 mA, TA = 25°C, unless otherwise noted.
Table 4.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
VOUT
Grade A
2.988
3.000
3.012
V
Grade B
2.994
3.000
3.006
V
Initial Accuracy
VOERR
Grade A
±0.4%
−12
+12
mV
Grade B
±0.2%
−6
+6
mV
Temperature Coefficient1
TCVO
−40°C < TA < +85°C
Grade A
25
70
ppm/°C
Grade B
15
40
ppm/°C
Output Voltage Change vs. IIN
∆VR
IIN = 0.1 mA to 15 mA
1
mV
−40°C < TA < +85°C
4
mV
IIN = 1 mA to 15 mA
−40°C < TA < +85°C
2
mV
Dynamic Output Impedance
(∆VR/∆IR)
IIN = 0.1 mA to 15 mA
0.2
Ω
Minimum Operating Current
IIN
−40°C < TA < +85°C
50
μA
Voltage Noise
eN p-p
0.1 Hz to 10 Hz
22
μV p-p
Turn-On Settling Time
tR
2
μs
Output Voltage Hysteresis
∆VOUT_HYS
IIN = 1 mA
40
ppm
1 Guaranteed by design; not production tested.
ADR540 ELECTRICAL CHARACTERISTICS
IIN = 50 μA to 15 mA, TA = 25°C, unless otherwise noted.
Table 5.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
VOUT
Grade A
4.080
4.096
4.112
V
Grade B
4.088
4.096
4.104
V
Initial Accuracy
VOERR
Grade A
±0.4%
−16
+16
mV
Grade B
±0.2%
−8
+8
mV
Temperature Coefficient1
TCVO
−40°C < TA < +85°C
Grade A
25
70
ppm/°C
Grade B
15
40
ppm/°C
Output Voltage Change vs. IIN
∆VR
IIN = 0.1 mA to 15 mA
1
mV
−40°C < TA < +85°C
5
mV
IIN = 1 mA to 15 mA
−40°C < TA < +85°C
2
mV
Dynamic Output Impedance
(∆VR/∆IR)
IIN = 0.1 mA to 15 mA
0.2
Ω
Minimum Operating Current
IIN
−40°C < TA < +85°C
50
μA
Voltage Noise
eN p-p
0.1 Hz to 10 Hz
30
μV p-p
Turn-On Settling Time
tR
2
μs
Output Voltage Hysteresis
∆VOUT_HYS
IIN = 1 mA
40
ppm
1 Guaranteed by design; not production tested.



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