DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

NPN SILICON RF TRANSISTOR

2SC5013

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

4-PIN SUPER MINIMOLD

The mark

shows major revised points.

Document No. PU10518EJ01V0DS (1st edition)

(Previous No. P10401EJ2V0DS00)

Date Published August 2004 CP(K)

Printed in Japan

FEATURES

• Low Noise, High Gain

• Low Voltage Operation

• 4-pin super minimold Package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5013

50 pcs (Non reel)

2SC5013-T1

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

35

mA

Total Power Dissipation

Note

150

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Free air