BCP56-10 datasheet(3/7 Pages) INFINEON

3 / 7 page

2011-10-13

BCP54...-BCP56...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCP54...

IC = 10 mA, IB = 0 , BCP55...

IC = 10 mA, IB = 0 , BCP56-10, -16

V(BR)CEO

Collector-base breakdown voltage

IC = 100 µA, IE = 0 , BCP54...

IC = 100 µA, IE = 0 , BCP55...

IC = 100 µA, IE = 0 , BCP56-10, -16

V(BR)CBO

100

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector-base cutoff current

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

0.1

µA

DC current gain1)

IC = 5 mA, VCE = 2 V

IC = 150 mA, VCE = 2 V, BCP54/BCP55

IC = 150 mA, VCE = 2 V, BCP56-10

IC = 150 mA, VCE = 2 V, BCP54-16...BCP56-16

IC = 500 mA, VCE = 2 V

hFE

100

160

250

160

250

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

0.5

Base-emitter voltage1)

IC = 500 mA, VCE = 2 V

VBE(ON)

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 100 MHz

100

MHz

1Pulse test: t < 300µs; D < 2%

BCP56-10 数据表(PDF) 3 Page - Infineon Technologies AG

BCP56-10 数据表(HTML) 3 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7

数据表下载