BFP740FE6327 datasheet(1/10 Pages) INFINEON

部件名	BFP740FE6327

功能描述	NPN Silicon Germanium RF Transist

PDF	10 Pages

Scroll/Zoom	100%

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

标志

1 / 10 page

2007-04-20

BFP740F

1

2

4

3

NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF transistor

• Provides outstanding performance for

a wide range of wireless applications

up to 10 GHz and more

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.5 dB at 1.8 GHz

Outstanding noise figure F = 0.75 dB at 6 GHz

• High maximum stable gain

Gms = 27.5 dB at 1.8 GHz

• Gold metallization for extra high reliability

• 150 GHz f

T-Silicon Germanium technology

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

1

3

4

2

Direction of Unreeling

Top View

XYs

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP740F

R7s

1=B

2=E

3=C

4=E

-

TSFP-4

1Pb-containing package may be available upon special request

类似零件编号 - BFP740FE6327

制造商	部件名	数据表	功能描述
Infineon Technologies A...	BFP740FESD	1Mb / 29P	Robust High Performance Low Noise Bipolar RF Transistor Revision 1.1, 2010-06-29
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	BFP740FESD	1Mb / 28P	Robust Low Noise Silicon Germanium Bipolar RF Transistor Revision 1.2, 2012-10-11

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