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STM8T143 数据表(PDF) 39 Page - STMicroelectronics |
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STM8T143 数据表(HTML) 39 Page - STMicroelectronics |
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39 / 65 page ![]() DocID18315 Rev 6 39/65 STM8T143 Electrical characteristics 64 9.3.2 Average current consumption Test conditions: TA = 25 °C, CX = 20 pF, and RX = 2 kΩ Note: Consumption does not depend on detection thresholds. 9.3.3 I/O pin characteristics Table 11. Average current consumption Symbol Parameter Conditions Typ. Max. Unit IDD Normal power mode(1) 1. Tested in production. 3.05 ≤ VDD ≤ 5.5 60 75 µA Low power mode 1(2) 2. Not applicable for Silicon revision 1, please refer to the STM8T143 errata sheet (STM8T143 device limitations). 30 - Low power mode 2(2) 17 - Low power mode 3(2) 11 - Control halt mode(2) 27 Normal power mode(1) VDD = 2.3 V 45 60 Low power mode 1(2) -- Low power mode 2(2) -- Low power mode 3(2) -- Control halt mode(2) 27 Table 12. OUT/TOUT/DATA streaming pin characteristics Symbol Parameter Conditions Min(1) 1. Guaranteed by characterization, not tested in production. Typ. Max.(1) Unit VOH VDD = 5 V ILOAD = 1 mA TA = @ 25 °C VDD-0.1 VDD-0.1 - V VDD = 3.3 V VDD-0.1 VDD-0.1 - VDD = 2.5 V VDD-0.2 VDD-0.1 - VDD = 2.3 V VDD-0.2 VDD-0.1 - VOL VDD = 5 V - 0.06 0.07 VDD = 3.3 V - 0.06 0.08 VDD = 2.5 V - 0.06 0.08 VDD = 2.3 V - 0.07 0.09 Ilkg Input leakage current(2) 2. The maximum value may be exceeded if negative current is injected on adjacent pins. -1 - 1 µA |
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