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STPS5L60SY 数据表(PDF) 2 Page - STMicroelectronics |
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STPS5L60SY 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics STPS5L60-Y 2/7 Doc ID 022951 Rev 1 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.39 x IF(AV) + 0.028x IF 2 (RMS) Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) Forward rms current 15 A IF(AV) Average forward current Tl = 100 °C δ = 0.5 5A IFSM Surge non repetitive forward current Half wave, single phase tp = 10 ms 150 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 4000 W Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature(1) -40 to +150 °C dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25 °C) 10000 V/µs 1. condition to avoid thermal runaway for a diode on its own heatsink dPtot dTj --------------- 1 Rth j a – () -------------------------- < Table 3. Thermal parameters Symbol Parameter Value Unit Rth (j-l) Junction to leads 15 °C/W Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM 0.22 mA Tj = 100 °C 10 25 Tj = 125 °C 40 100 VF (1) Forward voltage drop Tj = 25 °C IF = 5 A 0.47 0.52 V Tj = 100 °C 0.43 0.49 Tj = 125 °C 0.42 0.48 1. Pulse test: tp = 380 µs, δ < 2% |
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