This is information on a product in full production.

October 2012

Doc ID 023604 Rev 2

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9

STPSC10H065

650 V power Schottky silicon carbide diode

Datasheet

Features

temperature

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide bandgap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1.

Device summary

Symbol

Value

10 A

650 V

175 °C

K

K

A

K

A

NC

K

A

NC

K

A

TO-220AC

STPSC10H065D

STPSC10H065G-TR

DPAK

STPSC10H065B-TR

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