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STPSC10H065 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPSC10H065
功能描述  650 V power Schottky silicon carbide diode
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPSC10H065 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
STPSC10H065
2/9
Doc ID 023604 Rev 2
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 1.35 x IF(AV) + 0.115 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
650
V
IF(RMS) Forward rms current
22
A
IF(AV)
Average forward current
Tc = 120 °C,  = 0.5
10
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
90
80
470
A
IFRM
Repetitive peak forward current
Tc = 120 °C,Tj = 150 °C,  = 0.1
36
A
Tstg
Storage temperature range
-55 to +175
°C
Tj
Operating junction temperature(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
-40 to +175
°C
Table 3.
Thermal resistance (typical values)
Symbol
Parameter
Value
Unit
Typ.
Max.
Rth(j-c)
Junction to case
1.25
1.5
°C/W
Table 4.
Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
tp = 10 ms,  < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
-9
100
µA
Tj = 150 °C
-
85
425
VF
(2)
2.
tp = 500 µs,  < 2%
Forward voltage drop
Tj = 25 °C
IF = 10 A
-1.56
1.75
V
Tj = 150 °C
-
1.98
2.5
Table 5.
Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Typ.
Unit
Qcj
(1)
1.
Most accurate value for the capacitive charge:
Total capacitive charge VR = 400 V,
28.5
nC
Cj
Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
480
pF
VR = 400 V, Tc = 25 °C, F = 1 MHz
48
dPtot
dTj
---------------
1
Rth j
a

--------------------------
Q =
cj(vR).dvR
cj
VOUT
0



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