STX826 datasheet(3/9 Pages) STMICROELECTRONICS

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STX826

Electrical characteristics

Doc ID 11747 Rev 3

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Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = -60 V

-10

µA

ICEO

Collector cut-off current

(IB = 0)

VCE= -30 V

-100

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB= -5 V

-10

µA

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = -100 µA

-60

V(BR)CEO

(1)

Collector-emitter

breakdown voltage (IB = 0)

IC = -10 mA

-30

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = -100 µA

-5

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = -1 A

IB = -50 mA

IC = -2 A

IB = -100 mA

IC = -3 A

IB = -150 mA

-0.4

-0.7

-1.1

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = -2 A

IB = -100 mA

-1.2

hFE

DC current gain

IC = -100 mA VCE = -2 V

IC = -1 A

VCE = -2 V

IC = -3 A

VCE = -2 V

100

300

Transition frequency

VCE = -10 V

IC = -0.1 A

100

MHz

Pulse duration = 300 µs, duty cycle

≤ 1.5 %

Obsolete

Product(s)

- Obsolete

Product(s)

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