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LM5107SD 数据表(PDF) 3 Page - Texas Instruments

部件名 LM5107SD
功能描述  LM5107 100V / 1.4A Peak Half Bridge Gate Driver
PDF  18 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

LM5107SD 数据表(HTML) 3 Page - Texas Instruments

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LM5107
www.ti.com
SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
VDD to VSS
-0.3V to 18V
HB to HS
−0.3V to 18V
LI or HI to VSS
−0.3V to VDD +0.3V
LO to VSS
−0.3V to VDD +0.3V
HO to VSS
VHS −0.3V to VHB +0.3V
HS to VSS
(3)
−5V to 100V
HB to VSS
118V
Junction Temperature
-40°C to +150°C
Storage Temperature Range
−55°C to +150°C
ESD Rating HBM(4)
2 kV
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test
conditions, see the Electrical Characteristics .
(2)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3)
In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15V. For example, if VDD
= 10V, the negative transients at HS must not exceed -5V.
(4)
The human body model is a 100 pF capacitor discharged through a 1.5k
Ω resistor into each pin. Pin 6 , Pin 7 and Pin 8 are rated at
500V.
Recommended Operating Conditions
VDD
8V to 14V
HS(1)
−1V to 100V
HB
VHS +8V to VHS +14V
HS Slew Rate
< 50 V/ns
Junction Temperature
−40°C to +125°C
(1)
In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15V. For example, if VDD
= 10V, the negative transients at HS must not exceed -5V.
Copyright © 2004–2013, Texas Instruments Incorporated
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