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CBC3105-R4C 数据表(PDF) 6 Page - Cymbet Corporation

部件名 CBC3105-R4C
功能描述  EnerChip CC with Integrated Power Management
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  CYMBET [Cymbet Corporation]
网页  http://www.cymbet.com
标志 CYMBET - Cymbet Corporation

CBC3105-R4C 数据表(HTML) 6 Page - Cymbet Corporation

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EnerChip CC CBC3105
©2012 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-21 Rev E
Page 6 of 12
Preliminary
CHARGE PUMP CHARACTERISTICS
VDD=2.5Vto5.5V,Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
MIN
MAX
UNITS
ENABLE=VDD to Charge
Pump Active
tCPON
ENABLE to 3rd charge pump
pulse, VDD=3.3V
60
80
µs
ENABLE Falling to
Charge Pump Inactive
tCPOFF
-
0
1
µs
Charge Pump Frequency
fCP
-
120
KHz (1)
Charge Pump
Resistance
RCP
Delta VBAT, for IBAT charging
current of 1µA to 100µA
CFLY=0.1µF, CBAT=1.0µF
150
300
Ω
VCHG Output Voltage
VCP
CFLY=0.1µF, CBAT=1.0µF,
IOUT=1µA, Temp=+25ºC
4.075
4.125
V
VCHG Temp. Coefficient
TCCP
IOUT=1µA, Temp=+25ºC
-2.0
-2.4
mV/ºC
Charge Pump Current
Drive
ICP
IBAT=1mA
CFLY=0.1µF, CBAT=1.0µF
1.0
-
mA
Charge Pump on Voltage
VENABLE
ENABLE=VDD
2.5
-
V
(1) fCP = 1/tCPPER
ADDITIONAL CHARACTERISTICS
Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
LIMITS
UNITS
MIN
MAX
VBAT Cutoff Threshold
VBATCO
IOUT=1µA
2.75
3.25
V
Cutoff Temp. Coefficient
TCCO
-
+1
+2
mV/ºC
VBAT Cutoff Delay Time
tCOOFF
VBAT from 40mV above to
20mV below VBATCO
IOUT=1µA
40
-
ms
VOUT Dead Time, VDD
Rising (2)
tRSBR
IOUT=1mA
VBAT=4.1V
0.2
2.0
µs
VOUT Dead Time, VDD
Falling (2)
tRSBF
VBAT=4.1V
0.2
2.0
µs
Bypass Resistance
ROUT
-
-
2.5
Ω
(2) Dead time is the time period when the VOUT pin is floating. Size the holding capacitor accordingly.
Note:Allspecificationscontainedwithinthisdocumentaresubjecttochangewithoutnotice



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