CM50TL-24NF datasheet(2/4 Pages) POWEREX

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CM50TL-24NF

Six IGBTMOD™ NF-Series Module

50 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

10/10 Rev. 1

Absolute Maximum Ratings,

Tj = 25°C unless otherwise specified

Characteristics

Symbol

CM50TL-24NF

Units

Power Device Junction Temperature

-40 to 150

°C

Storage Temperature

Tstg

-40 to 125

°C

Collector-Emitter Voltage (G-E Short)

VCES

1200

Volts

Gate-Emitter Voltage (C-E Short)

VGES

±20

Volts

Collector Current (TC = 94°C)*

Amperes

Peak Collector Current (Tj ≤ 150°C)

ICM

100**

Amperes

Emitter Current***

Amperes

Peak Emitter Current***

IEM

100**

Amperes

Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)

390

Watts

Mounting Torque, M5 Mounting Screws

—

in-lb

Mounting Torque, M5 Main Terminal Screws

—

in-lb

Module Weight (Typical)

—

350

Grams

Isolation Voltage, AC 1 minute, 60Hz Sinusoidal

VISO

2500

Volts

Electrical and Mechanical Characteristics,

Tj = 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector Cutoff Current

ICES

VCE = VCES, VGE = 0V

—

1.0

Gate-Emitter Threshold Voltage

VGE(th)

IC = 5.0mA, VCE = 10V

Volts

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

—

0.5

µA

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 50A, VGE = 15V, Tj = 25°C

—

2.1

3.0

Volts

IC = 50A, VGE = 15V, Tj = 125°C

—

2.4

—

Volts

Input Capacitance

Cies

—

8.5

Output Capacitance

Coes

VCE = 10V, VGE = 0V

—

0.75

Reverse Transfer Capacitance

Cres

—

0.17

Total Gate Charge

VCC = 600V, IC = 50A, VGE = 15V

—

250

—

Inductive

Turn-on Delay Time

td(on)

—

100

Load

Turn-on Rise Time

VCC = 600V, IC = 50A,

—

Switch

Turn-off Delay Time

td(off)

VGE1 = VGE2 = 15V,

—

300

Time

Turn-off Fall Time

RG = 6.3Ω, IE = 50A,

—

350

Reverse Recovery Time***

trr

Inductive Load Switching Operation

—

100

Reverse Recovery Charge***

Qrr

—

2.0

—

µC

Emitter-Collector Voltage***

VEC

IE = 50A, VGE = 0V

—

3.8

Volts

*TC, Tf measured point is just under the chips.

**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.

***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

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