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LMV712TL 数据表(PDF) 13 Page - Texas Instruments

部件名 LMV712TL
功能描述  LMV712-N Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown
PDF  22 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

LMV712TL 数据表(HTML) 13 Page - Texas Instruments

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LMV712-N
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SNOS534G – MAY 2004 – REVISED MARCH 2010
The circuit in Figure 35 is an improvement to the one in Figure 34 because it provides DC accuracy as well as
AC stability. In this circuit, RF provides the DC accuracy by using feed-forward techniques to connect VIN to RL.
CF and RISO serve to counteract the loss of phase margin by feeding the high frequency component of the output
signal back to the amplifier's inverting input, thereby preserving phase margin in the overall feedback loop.
Increased capacitive drive is possible by increasing the value of CF. This in turn will slow down the pulse
response.
Figure 35.
LATCHUP
CMOS devices tend to be susceptible to latchup due to their internal parasitic SCR (silicon controlled rectifier)
effects. The input and output pins look similar to the gate of the SCR. There is a minimum current required to
trigger the SCR gate lead. The LMV712-N is designed to withstand 150mA surge current on all the pins. Some
resistive method should be used to isolate any capacitance from supplying excess current to the pins. In addition,
like an SCR, there is a minimum holding current for any latchup mode. Limiting current to the supply pins will
also inhibit latchup susceptibility.
Copyright © 2004–2010, Texas Instruments Incorporated
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