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MCP609-I/P 数据表(PDF) 4 Page - Microchip Technology |
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MCP609-I/P 数据表(HTML) 4 Page - Microchip Technology |
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4 / 42 page  MCP606/7/8/9 DS11177F-page 4 © 2009 Microchip Technology Inc. AC CHARACTERISTICS MCP608 CHIP SELECT CHARACTERISTICS FIGURE 1-1: Timing Diagram for the CS Pin on the MCP608. Electrical Characteristics: Unless otherwise indicated, V DD = +2.5V to +5.5V, VSS =GND, TA =+25°C, VCM =VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF, and CS is tied low (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions AC Response Gain Bandwidth Product GBWP — 155 — kHz Phase Margin PM — 62 — ° G = +1 V/V Slew Rate SR — 0.08 — V/µs Noise Input Noise Voltage Eni —2.8 — µVP-P f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni —38 — nV/ √Hz f = 1 kHz Input Noise Current Density ini —3 — fA/ √Hz f = 1 kHz Electrical Characteristics: Unless otherwise indicated, V DD = +2.5V to +5.5V, VSS =GND, TA =+25°C, VCM =VDD/2, VOUT ≈ VDD/2, VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF, and CS is tied low (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions CS Low Specifications CS Logic Threshold, Low VIL VSS —0.2 VDD V CS Input Current, Low ICSL -0.1 0.01 — µA CS = 0.2VDD CS High Specifications CS Logic Threshold, High VIH 0.8 VDD —VDD V CS Input Current, High ICSH —0.01 0.1 µA CS = VDD CS Input High, GND Current ISS -2 -0.05 — µA CS = VDD Amplifier Output Leakage, CS High IO(LEAK) —10 — nA CS = VDD CS Dynamic Specifications CS Low to Amplifier Output Turn-on Time tON — 9 100 µs CS = 0.2VDD to VOUT = 0.9 VDD/2, G = +1 V/V, RL = 1 kΩ to VSS CS High to Amplifier Output Hi-Z tOFF —0.1 — µs CS = 0.8VDD to VOUT = 0.1 VDD/2, G = +1 V/V, RL = 1 kΩ to VSS CS Hysteresis VHYST —0.6 — V VDD = 5.0V CS VOUT ISS ICS VIL VIH tON tOFF -50 nA -50 nA -18.7 µA -50 nA -50 nA Hi-Z Hi-Z (typical) (typical) (typical) (typical) (typical) |
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