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PCF8576DT/2 数据表(PDF) 32 Page - NXP Semiconductors

部件名 PCF8576DT/2
功能描述  Universal LCD driver for low multiplex rates
PDF  57 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

PCF8576DT/2 数据表(HTML) 32 Page - NXP Semiconductors

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PCF8576D
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 14 — 10 June 2013
32 of 57
NXP Semiconductors
PCF8576D
Universal LCD driver for low multiplex rates
10. Limiting values
[1]
Pass level; Human Body Model (HBM) according to Ref. 8 “JESD22-A114”.
[2]
Pass level; Machine Model (MM), according to Ref. 9 “JESD22-A115”.
[3]
Pass level; Charged-Device Model (CDM), according to Ref. 10 “JESD22-C101”.
[4]
Pass level; latch-up testing according to Ref. 11 “JESD78” at maximum ambient temperature (Tamb(max)).
[5]
According to the store and transport requirements (see Ref. 14 “UM10569”) the devices have to be stored
at a temperature of +8
C to +45 C and a humidity of 25 % to 75 %.
CAUTION
Static voltages across the liquid crystal display can build up when the LCD supply voltage
(VLCD) is on while the IC supply voltage (VDD) is off, or vice versa. This may cause unwanted
display artifacts. To avoid such artifacts, VLCD and VDD must be applied or removed together.
Table 18.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
0.5
+6.5
V
VLCD
LCD supply voltage
0.5
+7.5
V
VI
input voltage
on each of the pins CLK,
SDA, SCL, SYNC, SA0,
OSC, A0 to A2
0.5
+6.5
V
VO
output voltage
on each of the pins S0 to
S39, BP0 to BP3
0.5
+7.5
V
II
input current
10
+10
mA
IO
output current
10
+10
mA
IDD
supply current
50
+50
mA
IDD(LCD) LCD supply current
50
+50
mA
ISS
ground supply current
50
+50
mA
Ptot
total power dissipation
-
400
mW
Po
output power
-
100
mW
VESD
electrostatic discharge
voltage
HBM
[1] -
5000
V
MM
[2] -
200
V
CDM
[3] -
1500
V
Ilu
latch-up current
[4] -
200
mA
Tstg
storage temperature
[5]
65
+150
C
Tamb
ambient temperature
operating device
40
+85
C



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