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LTC1735CF 数据表(PDF) 21 Page - Linear Technology |
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LTC1735CF 数据表(HTML) 21 Page - Linear Technology |
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21 / 32 page ![]() 21 LTC1735 1735fc Although all dissipative elements in the circuit produce losses, 4 main sources usually account for most of the losses in LTC1735 circuits: 1) VIN current, 2) INTVCC current, 3) I2R losses, 4) Topside MOSFET transition losses. 1) The VIN current is the DC supply current given in the electrical characteristics which excludes MOSFET driver and control currents. VIN current results in a small (<0.1%) loss that increases with VIN. 2) INTVCC current is the sum of the MOSFET driver and control currents. The MOSFET driver current results from switching the gate capacitance of the power MOSFETs. Each time a MOSFET gate is switched from low to high to low again, a packet of charge dQ moves from INTVCC to ground. The resulting dQ/dt is a current out of INTVCC that is typically much larger than the control circuit current. In continuous mode, IGATECHG = f(QT+QB), where QT and QB are the gate charges of the topside and bottom-side MOSFETs. Supplying INTVCC power through the EXTVCC switch input from an output-derived or other high efficiency source will scale the VIN current required for the driver and control circuits by a factor of (Duty Cycle)/(Efficiency). For ex- ample, in a 20V to 5V application, 10mA of INTVCC current results in approximately 3mA of VIN current. This reduces the mid-current loss from 10% or more (if the driver was powered directly from VIN) to only a few percent. 3) I2R losses are predicted from the DC resistances of the MOSFET, inductor and current shunt. In continuous mode the average output current flows through L and RSENSE, but is “chopped” between the topside main MOSFET and the synchronous MOSFET. If the two MOSFETs have approximately the same RDS(ON), then the resistance of one MOSFET can simply be summed with the resistances of L and RSENSE to obtain I2R losses. For example, if each RDS(ON) = 0.03Ω, RL = 0.05Ω and RSENSE = 0.01Ω, then the total resistance is 0.09 Ω.Thisresultsinlossesranging from 2% to 9% as the output current increases from 1A to 5A for a 5V output, or a 3% to 14% loss for a 3.3V output. Effeciency varies as the inverse square of VOUT for the same external components and output power level. I2R losses cause the efficiency to drop at high output currents. 4) Transition losses apply only to the topside MOSFET(s) and only become significant when operating at high input voltages (typically 12V or greater). Transition losses can be estimated from: Transition Loss = (1.7) VIN2 IO(MAX) CRSS f Other “hidden” losses such as copper trace and internal battery resistances can account for an additional 5% to 10% efficiency degradation in portable systems. It is very important to include these “system” level losses in the design of a system. The internal battery and fuse resis- tance losses can be minimized by making sure that CIN has adequate charge storage and very low ESR at the switch- ing frequency. A 25W supply will typically require a minimum of 20 µF to 40µF of capacitance having a maxi- mum of 0.01 Ω to 0.02Ω of ESR. Other losses including Schottky conduction losses during dead-time and induc- tor core losses generally account for less than 2% total additional loss. Checking Transient Response The regulator loop response can be checked by looking at the load current transient response. Switching regulators take several cycles to respond to a step in load current. When a load step occurs, VOUT shifts by an amount equal to ∆ILOAD (ESR), where ESR is the effective series resis- tance of COUT. ∆ILOAD also begins to charge or discharge COUT, generating the feedback error signal that forces the regulator to adapt to the current change and return VOUT to its steady-state value. During this recovery time VOUT can be monitored for excessive overshoot or ringing, which would indicate a stability problem. OPTI-LOOP compensation allows the transient response to be opti- mized over a wide range of output capacitance and ESR values. The availability of the ITH pin not only allows optimization of control loop behavior but also provides a DC coupled and AC filtered closed loop response test point. The DC step, rise time and settling at this test point truly reflects the closed loop response. Assuming a pre- dominantly second order system, phase margin and/or damping factor can be estimated using the percentage of overshoot seen at this pin. The bandwidth can also be estimated by examining the rise time at the pin. The ITH external components shown in the Figure 1 circuit will provide an adequate starting point for most applications. APPLICATIO S I FOR ATIO |
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