1/3

www.rohm.com

○

c

2011 ROHM Co., Ltd. All rights reserved.

2011.03 - Rev.B

Medium power transistor (60V, 0.5A)

2SC5876



Features



Dimensions (Unit : mm)

2) Low saturation voltage, typically

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SA2088



Applications

Small signal low frequency amplifier

High speed switching



Structure

NPN Silicon epitaxial planar transistor



Packaging specifications

Taping

2SC5876

Type

T106

3000

Package

Basic ordering unit

(pieces)

Code



Absolute maximum ratings (Ta=25

C)

Parameter

V

V

V

A

mW

∗1 Pw=10ms

∗2 Each terminal mounted on a recommended land.

∗2

∗1

°C

A

°C

Tj

Tstg

Symbol

60

60

6

0.5

1.0

200

150

−55 to +150

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

Each lead has same dimensions

Abbreviated symbol : VS

UMT3

1.25

2.1

0.1Min.

(1)Emitter

(2)Base

(3)Collector