2SC2713

2007-11-01

1

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process)

2SC2713

Audio Frequency General Purpose Amplifier Applications

• Low noise: NF = 1dB (typ.), 10dB (max)

• Complementary to 2SA1163

• Small package

Characteristics

Symbol

Rating

Unit

Collector-base voltage

120

V

Collector-emitter voltage

120

V

Emitter-base voltage

5

V

Collector current

100

mA

Base current

20

mA

Collector power dissipation

150

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

⎯

⎯

0.1

μA

Emitter cut-off current

⎯

⎯

0.1

μA

DC current gain

(Note)

200

⎯

700

Collector-emitter saturation voltage

⎯

⎯

0.3

V

Transition frequency

⎯

100

⎯

MHz

Collector output capacitance

⎯

3.0

⎯

pF

Noise figure

NF

f

⎯

1.0

10

dB

Marking

Unit: mm

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012 g (typ.)